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TLRE11TP Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TLRE11TP
Description  Panel Circuit Indicator
Download  8 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLRE11TP Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  TLRE11TP Datasheet HTML 1Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 2Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 3Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 4Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 5Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 6Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 7Page - Toshiba Semiconductor TLRE11TP Datasheet HTML 8Page - Toshiba Semiconductor  
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TL(RE,OE,YE,GE,PGE)11TP(F)
2007-10-01
2
Electrical and Optical Characteristics (Ta = 25°C)
Typ. Emission Wavelength
Luminous Intensity
IV
Forward Voltage
VF
Reverse Current
IR
Product Name
λd
λP
Δλ
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLRE11TP(F)
630
(644)
20
20
8.5
20
20
1.9
2.4
20
50
4
TLOE11TP(F)
605
(612)
20
20
27.2
65
20
2.0
2.4
20
50
4
TLYE11TP(F)
587
(590)
17
20
15.3
45
20
2.0
2.4
20
50
4
TLGE11TP(F)
571
(574)
17
20
8.5
20
20
2.0
2.4
20
50
4
TLPGE11TP(F)
558
(562)
14
20
2.72
8
20
2..1
2.4
20
50
4
Unit
nm
mA
mcd
mA
V
mA
μA
V
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.


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