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VN610SP-E Fiches technique(PDF) 2 Page - STMicroelectronics |
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VN610SP-E Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 18 page VN610SP-E 2/18 Figure 2. Block Diagram Table 3. Absolute Maximum Ratings Symbol Parameter Value Unit VCC DC supply voltage 41 V -VCC Reverse DC supply voltage -0.3 V - IGND DC reverse ground pin current -200 mA IOUT DC output current Internally limited A - IOUT Reverse DC output current -50 A IIN DC input current +/- 10 mA VCSENSE Current sense maximum voltage -3 +15 V V VESD Electrostatic Discharge (Human Body Model: R=1.5K Ω; C=100pF) - INPUT - CURRENT SENSE - OUTPUT - VCC 4000 2000 5000 5000 V V V V EMAX Maximum Switching Energy (L=0.05mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=75A) 193 mJ Ptot Power dissipation at TC<25°C 139 W Tj Junction operating temperature Internally limited °C Tc Case operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C LOGIC UNDERVOLTAGE OVERVOLTAGE OVERTEMP. ILIM PwCLAMP K IOUT GND INPUT VCC OUTPUT CURRENT SENSE DRIVER VCC CLAMP VDSLIM |
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Description similaire - VN610SP-E |
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