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TLBE1100B Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce TLBE1100B
Description  Panel Circuit Indicator
Download  10 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLBE1100B Fiches technique(HTML) 4 Page - Toshiba Semiconductor

  TLBE1100B Datasheet HTML 1Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 2Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 3Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 4Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 5Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 6Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 7Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 8Page - Toshiba Semiconductor TLBE1100B Datasheet HTML 9Page - Toshiba Semiconductor Next Button
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TL(BE,GTE,EGE)1100B(T11)
2007-10-01
4
TLGTE1100B
Ta
= 25°C
1
100
30
2.4
4.2
3.8
2.6
4.6
10
3
3.0
50
5
3.4
0.1
10
3
80
60
100
1
0.3
20
5
0.5
−20
0
40
IF = 20 mA
Ta
= 25°C
0
520
0.4
1.0
0.8
400
600
560
480
440
640
0.6
0.2
Forward voltage VF
(V)
IF – VF
Forward current IF
(mA)
IV – IF
Case temperature Tc (°C)
IV – Tc
Wavelength
λ (nm)
Relative Iv -
λ
Ta = 25°C
Radiation pattern
30
°
0
°
60
°
90
°
90
°
30
°
60
°
1.0
0.8
0.6
0.4
0.2
0
80
°
70
°
50
°
40
°
20
°
10
°
70
°
80
°
50
°
40
°
20
°
10
°
Ta
= 25°C
10
1000
1
50
500
300
100
30
50
3
5
10
30
100
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)


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