2SK2879-01_07 datasheet(1/4 Pages) FUJI

No de pièce	2SK2879-01

Description	N-CHANNEL SILICON POWER MOSFET FAP-2S Series

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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1

TO-3P

Item

Symbol

Ratings

Unit

Drain-source voltage

VDS

500

Continuous drain current

ID

±20

Pulsed drain current

ID(puls]

±80

Gate-source voltage

VGS

±30

Repetitive or non-repetitive

IAR *2

20

Maximum Avalanche Energy

EAS*1

761

Max. power dissipation

PD

150

Operating and storage

Tch

+150

temperature range

Tstg

Electrical characteristics (Tc =25°C unless otherwise specified)

Thermalcharacteristics

2SK2879-01

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

FAP-2S Series

Equivalent circuit schematic

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

Test Conditions

Zero gate voltage drain current

IDSS

VDS=500V

VGS=±30V

ID=10A

VGS=10V

ID=10A

VDS=25V

VCC=300V ID=20A

VGS=10V

RGS=10

Ω

Min.

Typ.

Max.

Units

V

µA

mA

nA

Ω

S

pF

A

V

ns

µC

ns

Min.

Typ.

Max.

Units

Thermal resistance

Rth(ch-c)

channel to case

Rth(ch-a)

channel to ambient

0.83

35.0

°C/W

Symbol

V(BR)DSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IAV

VSD

trr

Qrr

Item

Drain-source breakdown voltaget

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time ton

Turn-off time toff

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Test Conditions

ID=1mA

VGS=0V

ID=1mA

VDS=VGS

Tch=25°C

VGS=0V

Tch=125°C

VDS=0V

VDS=25V

VGS=0V

f=1MHz

L=3.49 mH Tch=25°C

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

-di/dt=100A/µs

Tch=25°C

V

A

V

A

mJ

W

°C

*1 L=3.49mH, Vcc=50V

*2 Tch=150°C

500

2.5

3.0

3.5

10

500

0.2

1.0

10

100

0.33

0.38

7.5

15.0

2200

3300

330

500

140

210

20

30

130

200

160

240

105

160

20

1.1

1.65

650

10.0

-55 to +150

<

Gate(G)

Source(S)

Drain(D)

Outline Drawings

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

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