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TC7MH245FK Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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TC7MH245FK Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TC7MH245FK 2007-10-19 3 Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0~5.5 V Input voltage (DIR, G) VIN 0~5.5 V Bus I/O voltage VI/O 0~VCC V Operating temperature Topr −40~85 °C 0~100 (VCC = 3.3 ± 0.3 V) Input rise and fall time dt/dv 0~20 (VCC = 5 ± 0.5 V) ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs and bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC or GND when the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited. Electrical Characteristics DC Characteristics Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 2.0 1.50 ⎯ ⎯ 1.50 ⎯ High level VIH ⎯ 3.0~5.5 VCC × 0.7 ⎯ ⎯ VCC × 0.7 ⎯ 2.0 ⎯ ⎯ 0.50 ⎯ 0.50 Input voltage Low level VIL ⎯ 3.0~5.5 ⎯ ⎯ VCC × 0.3 ⎯ VCC × 0.3 V 2.0 1.9 2.0 ⎯ 1.9 ⎯ 3.0 2.9 3.0 ⎯ 2.9 ⎯ IOH = −50 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯ IOH = −4 mA 3.0 2.58 ⎯ ⎯ 2.48 ⎯ High level VOH VIN = VIH or VIL IOH = −8 mA 4.5 3.94 ⎯ ⎯ 3.80 ⎯ 2.0 ⎯ 0 0.1 ⎯ 0.1 3.0 ⎯ 0 0.1 ⎯ 0.1 IOL = 50 μA 4.5 ⎯ 0 0.1 ⎯ 0.1 IOL = 4 mA 3.0 ⎯ ⎯ 0.36 ⎯ 0.44 Output voltage Low level VOL VIN = VIH or VIL IOL = 8 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44 V 3-state output off-state current IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 ⎯ ⎯ ±0.25 ⎯ ±2.50 μA Input leakage current IIN VIN = 5.5 V or GND 0~5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA |
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