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TA4012AFE Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TA4012AFE
Description  UHF Wide Band Amplifier Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA4012AFE Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  TA4012AFE_07 Datasheet HTML 1Page - Toshiba Semiconductor TA4012AFE_07 Datasheet HTML 2Page - Toshiba Semiconductor TA4012AFE_07 Datasheet HTML 3Page - Toshiba Semiconductor TA4012AFE_07 Datasheet HTML 4Page - Toshiba Semiconductor  
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TA4012AFE
2007-11-01
2
Electrical Characteristics (Ta = 25°C, Zg = Zl = 50 Ω)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Circuit current
ICC
VCC = 2 V, non carrier
4.5
6.5
8.5
mA
Band width
BW
VCC = 2 V
(Note3)
1.8
2.0
GHz
Insertion gain
⎪S21⎪
2
VCC = 2 V, f = 1.5 GHz
10
12
dB
Noise figure
NF
VCC = 2 V, f = 1.5 GHz
6
7.5
dB
Isolation
⎪S12⎪
2
VCC = 2 V, f = 1.5 GHz
−22
dB
Input return loss
⎪S11⎪
2
VCC = 2 V, f = 1.5 GHz
−6.5
dB
Output return loss
⎪S22⎪
2
VCC = 2 V, f = 1.5 GHz
−7.5
dB
Output power at 1 dB gain compression
Po1dB
VCC = 2 V, f = 1.5 GHz
0
dBmW
Note3:
BW is the frequency of 3dB down from
⎪S21⎪
2
at 1.5 GHz.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
RF Test Circuit (top view)
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
Equivalent Circuit
3
4
2
5
1
RF IN
GND
100 pF
1000 pF
10000 pF
L
RF OUT
1000 pF
1000 pF
L: 4 nh
2
1
3
5
4
VCC


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