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TA4012AFE Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TA4012AFE Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page TA4012AFE 2007-11-01 2 Electrical Characteristics (Ta = 25°C, Zg = Zl = 50 Ω) Characteristics Symbol Test Condition Min Typ. Max Unit Circuit current ICC VCC = 2 V, non carrier 4.5 6.5 8.5 mA Band width BW VCC = 2 V (Note3) 1.8 2.0 ⎯ GHz Insertion gain ⎪S21⎪ 2 VCC = 2 V, f = 1.5 GHz 10 12 ⎯ dB Noise figure NF VCC = 2 V, f = 1.5 GHz ⎯ 6 7.5 dB Isolation ⎪S12⎪ 2 VCC = 2 V, f = 1.5 GHz ⎯ −22 ⎯ dB Input return loss ⎪S11⎪ 2 VCC = 2 V, f = 1.5 GHz ⎯ −6.5 ⎯ dB Output return loss ⎪S22⎪ 2 VCC = 2 V, f = 1.5 GHz ⎯ −7.5 ⎯ dB Output power at 1 dB gain compression Po1dB VCC = 2 V, f = 1.5 GHz ⎯ 0 ⎯ dBmW Note3: BW is the frequency of 3dB down from ⎪S21⎪ 2 at 1.5 GHz. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. RF Test Circuit (top view) Notice The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. Equivalent Circuit 3 4 2 5 1 RF IN GND 100 pF 1000 pF 10000 pF L RF OUT 1000 pF 1000 pF L: 4 nh 2 1 3 5 4 VCC |
Numéro de pièce similaire - TA4012AFE_07 |
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Description similaire - TA4012AFE_07 |
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