TA4011FU

2007-11-01

1

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4011FU

UHF Wide Band Amplifier Applications

Features

Wide band: f = 2.4 GHz (3dB down)

Pin Assignment

Characteristic

Symbol

Rating

Unit

Supply voltage 1

3.2

V

Supply voltage 2

4

V

Total power dissipation

300

mW

Operating temperature

−40~85

°C

Storage temperature

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: When mounted on the glass epoxy of 2.5 cm

2

× 1.6 t

Caution

This device electrostatic sensitivity. Please handle with caution.

Weight: 0.006 g (typ.)