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TC74HC10AFN Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TC74HC10AFN
Description  CMOS Digital Integrated Circuit Silicon Monolithic Triple 3-Input NAND Gate
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC74HC10AFN Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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TC74HC10AP/AF/AFN
2007-10-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC10AP,TC74HC10AF,TC74HC10AFN
Triple 3-Input NAND Gate
The TC74HC10A is a high speed CMOS 3-INPUT NAND
GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages including buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
• High speed: tpd = 6 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
• High noise immunity: VNIH = VNIL = 28% VCC (min)
• Output drive capability: 10 LSTTL loads
• Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
• Balanced propagation delays: tpLH ∼− tpHL
• Wide operating voltage range: VCC (opr) = 2 to 6 V
• Pin and function compatible with 74LS10
Pin Assignment
IEC Logic Symbol
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC10AP
TC74HC10AF
TC74HC10AFN
Weight
DIP14-P-300-2.54
: 0.96 g (typ.)
SOP14-P-300-1.27A
: 0.18 g (typ.)
SOL14-P-150-1.27
: 0.12 g (typ.)


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