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TC74HC02AP Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TC74HC02AP Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 8 page TC74HC02AP/AF/AFN 2007-10-01 4 AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns) Test Condition Ta = 25°C Ta = −40~85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit Output transition time tTLH tTHL ⎯ 2.0 4.5 6.0 ⎯ ⎯ ⎯ 25 7 6 75 15 13 ⎯ ⎯ ⎯ 95 19 16 ns Propagation delay time tpLH tpHL ⎯ 2.0 4.5 6.0 ⎯ ⎯ ⎯ 27 9 8 75 15 13 ⎯ ⎯ ⎯ 95 19 16 ns Input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 pF Power dissipation capacitance CPD (Note) ⎯ ⎯ 21 ⎯ ⎯ ⎯ pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC/4 (per gate) |
Numéro de pièce similaire - TC74HC02AP |
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Description similaire - TC74HC02AP |
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