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1SV245 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 1SV245
Description  TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

1SV245 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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1SV245
2007-11-01
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV245
UHF SHF Tuning
• High capacitance ratio: C2 V/C25 V = 5.7 (typ.)
• Low series resistance: rs = 1.2 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Peak reverse voltage
VRM
35 (RL = 10 kΩ)V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
30
V
Reverse current
IR
VR = 28 V
10
nA
Capacitance
C2 V
VR = 2 V, f = 1 MHz
3.31
4.55
pF
Capacitance
C25 V
VR = 25 V, f = 1 MHz
0.61
0.77
pF
Capacitance ratio
C2 V/C25 V
5.0
5.7
6.5
Series resistance
rs
VR = 1 V, f = 470 MHz
1.2
2.0
Ω
Note 1: Unites are compounded in one package and are matched to 6.0%.
(min)
C
(min)
C
(max)
C
<= 0.06 (VR = 2~25 V)
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)


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