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TLRME50C Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TLRME50C
Description  Panel Circuit Indicator
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLRME50C Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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TLRME50C(F)
2007-10-01
1
TOSHIBA InGaAℓP LED
TLRME50C(F)
Panel Circuit Indicator
• Lead(Pb)-free products (lead: Sn-Ag-Cu)
• 3mm package wide viewing angle
• InGaAℓP
• Emitted color: Red
• Colored, Transparent lens
• Applications: Various types of information panels, indicators for
amusement equipment and panel backlighting
illumination sources.
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTICS
SYMBOL
RATING
UNIT
FORWARD CURRENT
IF
50
mA
REVERSE VOLTAGE
VR
4
V
POWER DISSIPATION
PD
120
mW
OPERATING TEMPERATURE
Topr
−40~100
°C
STORAGE TEMPERATURE
Tstg
−40~120
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL AND OPTICAL CHARACTERISTICS
(Ta
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
FORWARD VOLTAGE
VF
IF=20mA
1.9
2.4
V
REVERSE CURRENT
IR
VR=4V
50
μA
LUMINOUS INTENSITY
IV
IF=20mA(Note)
1530
3500
mcd
PEAK WAVELENGTH
λ P
IF=20mA
(636)
nm
SPECTRAL LINE HALF WIDTH
Δλ
IF=20mA
23
nm
DOMINANT WAVELENGTH
λ d
IF=20mA
626
nm
(Note):Lamps are classified into the following ranks according to their luminous intensity, and packed in boxes
by
each rank. T: 1530
−4140 mcd, U: 2720−7360 mcd, V: 4760mcd−
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming
stress to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light.
If a photo detector is located near the LED lamp, please ensure that it will not be affected by this IR light.
Unit
: mm
JEDEC
-
EIAJ
-
TOSHIBA
4
−3E1A
Weight: 0.14 g(Typ.)


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