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TC9WMC1FU Fiches technique(PDF) 5 Page - Toshiba Semiconductor

No de pièce TC9WMC1FU
Description  CMOS Digital Integrated Circuits Silicon Monolithic
Download  16 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC9WMC1FU Fiches technique(HTML) 5 Page - Toshiba Semiconductor

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TC9WMC1FK/FU,TC9WMC2FK/FU
2007-10-19
5
(3.2) Write (WRITE)
The Write instruction contains the 16 bits of data to be written into the specified memory
location. After the CS is driven High, a start bit is transferred followed by the WRITE instruction,
address and 16 bits of data. After the least significant bit (D0) of data is received on the rising
edge of SK, a write operation is triggered by the CS being pulled Low. It is not necessary to set
every bit in the memory array to “1” before writing data.
CS
SK
1 2
7 8 9 10
25
1
1
0
DI
DO
Hi-Z
A5
3 4 5 6
A4 A3 A2 A1 A0 D15
D0
Hi-Z
Figure 3. Write Timing Diagram (TC9WMC1)
Busy
Ready
Verify
tPW
CS
SK
1 2
7 8 9 10
27
1
1
0
DI
DO
Hi-Z
A5
3 4 5 6
A4 A3 A2 A1 A0 D15
D0
Hi-Z
Figure 4. Write Timing Diagram (TC9WMC2)
Busy
Ready
Verify
11 12
A6
x
tPW


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