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TC7SZU04AFE Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TC7SZU04AFE Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TC7SZU04AFE 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZU04AFE Inverter Features • High output drive: ±16 mA (typ.) @VCC = 3 V • Low quiescent power: ICC < 2 μA (max) @VCC = 5.5 V, Ta = 25°C • Operation voltage range: VCC (opr) = 1.8~5.5 V • Supply voltage data retention: VCC = 1.5~5.5 V • Latch-up performance: ±500 mA • ESD performance: Human body model > ±2000 V Machine model > ±200 V • Power down protection is provided on all inputs. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5~6 V DC input voltage VIN −0.5~6 V DC output voltage VOUT −0.5~VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 150 mW Storage temperature Tstg −65~150 °C Lead temperature (10 s) TL 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Weight: 0.003 g (typ.) |
Numéro de pièce similaire - TC7SZU04AFE_07 |
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Description similaire - TC7SZU04AFE_07 |
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