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TC7WG125FC Fiches technique(PDF) 3 Page - Toshiba Semiconductor

No de pièce TC7WG125FC
Description  CMOS Digital Integrated Circuit Silicon Monolithic Dual Bus Buffer with 3-STATE Output
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7WG125FC Fiches technique(HTML) 3 Page - Toshiba Semiconductor

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TC7WG125FC
2007-11-01
3
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
VCC
⎯
⎯
VCC
⎯
1.1~1.3
VCC
× 0.7
⎯
⎯
VCC
× 0.7
⎯
1.4~1.6
VCC
× 0.65
⎯
⎯
VCC
× 0.65
⎯
1.65~
1.95
VCC
× 0.65
⎯
⎯
VCC
× 0.65
⎯
2.3~2.7
1.7
⎯
⎯
1.7
⎯
High level
VIH
⎯
3.0~3.6
2.0
⎯
⎯
2.0
⎯
0.9
⎯
⎯
GND
⎯
GND
1.1~1.3
⎯
⎯
VCC
× 0.3
⎯
VCC
× 0.3
1.4~1.6
⎯
⎯
VCC
× 0.35
⎯
VCC
× 0.35
1.65~
1.95
⎯
⎯
VCC
× 0.35
⎯
VCC
× 0.35
2.3~2.7
⎯
⎯
0.7
⎯
0.7
Input voltage
Low level
VIL
⎯
3.0~3.6
⎯
⎯
0.8
⎯
0.8
V
IOH =−0.02 mA
0.9
0.75
⎯
⎯
0.75
⎯
IOH = −0.3 mA 1.1~1.3
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −1.7 mA 1.4~1.6
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −3.0 mA
1.65~
1.95
VCC
-0.45
⎯
⎯
VCC
-0.45
⎯
IOH = −4.0 mA 2.3~2.7
2.0
⎯
⎯
2.0
⎯
High level
VOH
VIN =VIL
or
VIH
IOH = −8.0 mA 3.0~3.6
2.48
⎯
⎯
2.48
⎯
IOL = 0.02 mA
0.9
⎯
⎯
0.1
⎯
0.1
IOL = 0.3 mA
1.1~1.3
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 1.7 mA
1.4~1.6
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 3.0 mA
1.65~
1.95
⎯
⎯
0.45
⎯
0.45
IOL = 4.0 mA
2.3~2.7
⎯
⎯
0.4
⎯
0.4
Output voltage
Low level
VOL
VIN= VIL
IOL = 8.0 mA
3.0~3.6
⎯
⎯
0.4
⎯
0.4
V
Input leakage current
IIN
VIN = 0~5.5V
0~3.6
⎯
⎯
±0.1
⎯
±1.0
μA
3-state output off-state current
IOZ
VIN = VIH or VIL
VOUT = 0~3.6V
0.9~3.6
⎯
⎯
1.0
⎯
10.0
μA
Power off leakage current
IOFF
VIN = 5.5V
or VOUT = 3.6V
0.0
⎯
⎯
1.0
⎯
10.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
3.6
⎯
⎯
1.0
⎯
10.0
μA


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