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TC7SH00FS Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce TC7SH00FS
Description  2 Input NAND Gate
Download  6 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SH00FS Fiches technique(HTML) 4 Page - Toshiba Semiconductor

  TC7SH00FS Datasheet HTML 1Page - Toshiba Semiconductor TC7SH00FS Datasheet HTML 2Page - Toshiba Semiconductor TC7SH00FS Datasheet HTML 3Page - Toshiba Semiconductor TC7SH00FS Datasheet HTML 4Page - Toshiba Semiconductor TC7SH00FS Datasheet HTML 5Page - Toshiba Semiconductor TC7SH00FS Datasheet HTML 6Page - Toshiba Semiconductor  
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TC7SH00FS
2007-11-01
4
AC Characteristics (Input: tr = tf = 3 ns)
Test Condition
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
VCC (V)
CL (pF)
Min
Typ.
Max
Min
Max
Unit
15
5.5
7.9
1.0
9.5
3.3
± 0.3
50
8.0
11.4
1.0
13.0
15
3.7
5.5
1.0
6.5
Propagation delay
time
tpLH
tpHL
5.0
± 0.5
50
5.2
7.5
1.0
8.5
ns
Input capacitance
CIN
4
10
10
pF
Power dissipation
capacitance
CPD
(Note)
14
pF
Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr.) = CPD・VCC・fIN + ICC


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