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TC7SG00FE Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce TC7SG00FE
Description  2 Input NAND Gate
Download  6 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SG00FE Fiches technique(HTML) 4 Page - Toshiba Semiconductor

  TC7SG00FE Datasheet HTML 1Page - Toshiba Semiconductor TC7SG00FE Datasheet HTML 2Page - Toshiba Semiconductor TC7SG00FE Datasheet HTML 3Page - Toshiba Semiconductor TC7SG00FE Datasheet HTML 4Page - Toshiba Semiconductor TC7SG00FE Datasheet HTML 5Page - Toshiba Semiconductor TC7SG00FE Datasheet HTML 6Page - Toshiba Semiconductor  
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TC7SG00FE
2007-11-01
4
AC Electrical Characteristics (input tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
26.9
1.1~1.3
10.9
20.7
1.0
38.6
1.4~1.6
5.9
9.6
1.0
11.3
1.65~
1.95
4.5
7.0
1.0
7.5
2.3~2.7
2.9
4.4
1.0
4.9
CL = 10 pF,
RL = 1 MΩ
3.0~3.6
2.2
3.5
1.0
4.1
0.9
30.0
1.1~1.3
12.0
24.2
1.0
42.0
1.4~1.6
6.5
10.5
1.0
12.6
1.65~
1.95
5.0
7.7
1.0
8.0
2.3~2.7
3.2
4.9
1.0
5.6
CL = 15 pF,
RL = 1 MΩ
3.0~3.6
2.5
3.8
1.0
4.4
0.9
45.0
1.1~1.3
18.0
33.4
1.0
63.2
1.4~1.6
8.9
14.8
1.0
17.9
1.65~
1.95
6.9
10.3
1.0
10.8
2.3~2.7
4.4
6.4
1.0
6.8
Propagation delay time
tPLH
tPHL
CL = 30 pF,
RL = 1 MΩ
3.0~3.6
3.5
4.9
1.0
5.4
ns
Input capacitance
CIN
3.6
3
pF
Power dissipation capacitance
CPD
(Note 13)
0.9~3.6
6
pF
Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC


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