TC7SET125FU datasheet(2/6 Pages) TOSHIBA

No de pièce	TC7SET125FU

Description	TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TC7SET125F/FU

2004-06-04

2

Logic Diagram

Truth Table

G

A

Y

H

X

Z

L

H

G

IN A

OUT Y

EN

Recommended Operating Conditions

Characteristics

Symbol

Rating

Unit

Supply voltage

VCC

4.5~5.5

V

Input voltage

VIN

0~5.5

V

Output voltage

VOUT

0~Vcc

V

Operating temperature

Topr

−40~85

°C

Input rise and fall time

dt/dv

0~20

ns/V

DC Electrical Characteristics

Ta

= 25°C

Ta

= −40~85°C

Characteristics

Symbol

Test Condition

VCC

(V)

Min

Typ.

Max

Min

Max

Unit

High-level input voltage

VIH

⎯

4.5~

5.5

2.0

⎯

2.0

⎯

V

Low-level input voltage

VIL

⎯

4.5~

5.5

⎯

0.8

⎯

0.8

V

IOH = −50 µA

4.5

4.4

4.5

⎯

4.4

⎯

High-level output voltage

VOH

VIN = VIH

or VIL

IOH = −8 mA

4.5

3.94

⎯

3.80

⎯

V

IOL = 50 µA

4.5

⎯

0.0

0.10

⎯

0.10

Low-level output voltage

VOL

VIN = VIH

or VIL

IOL = 8 mA

4.5

⎯

0.36

⎯

0.44

V

3-state output off-state

current

IOZ

VIN = VIH or VIL

VOUT = VCC or GND

5.5

⎯

±0.25

⎯

±2.5

µA

Input leakage current

IIN

VIN = 5.5 V or GND

0~

5.5

⎯

±0.1

⎯

±1.0

µA

ICC

VIN = VCC or GND

5.5

⎯

2.0

⎯

20.0

µA

Quiescent supply current

ICCT

Per Input

:VIN = 3.4 V

Other Input

:VCC or GND

5.5

⎯

1.35

⎯

1.50

mA

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