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2SK2835 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SK2835
Description  Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2835 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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2SK2835
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.56
0.8
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
S
Input capacitance
Ciss
440
Reverse transfer capacitance
Crss
35
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
120
pF
Rise time
tr
15
Turn−on time
ton
20
Fall time
tf
15
Switching time
Turn−off time
toff
60
ns
Total gate charge (gate−source
plus gate−drain)
Qg
10
Gate−source charge
Qgs
6
Gate−drain (“miller”) Charge
Qgd
VDD ≈ 100 V, VGS = 10 V, ID = 5 A
4
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
−2.0
V
Reverse recovery time
trr
150
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs
0.45
μC
Marking
K2835
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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