Moteur de recherche de fiches techniques de composants électroniques |
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2SJ619 Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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2SJ619 Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SJ619 2006-11-16 4 Case temperature Tc (°C) RDS (ON) − Tc Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth − Tc Case temperature Tc (°C) PD − Tc Total gate charge Qg (nC) Dynamic input/output characteristics −0.3 −30 −0.5 −3 −10 −5 −1.0 Common source Tc = 25°C pulse test −3 VGS = −10 V −5 −1 −2 0, 1 0 0.2 0.4 0.6 0.8 1.0 0 0.5 0.1 0.3 0.2 0.4 Common source pulse test ID = −8 V −4 −8 −2 −2, 4 VGS = −4 V VGS = −10 V −80 −40 0 40 80 160 120 100 300 1000 −1 −0.1 −100 −10 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 10 30 500 3000 −0.3 −3 −30 5000 50 100 20 40 80 0 0 80 120 200 40 160 60 −100 −20 −60 −40 −80 0 0 Common source ID = −16 A Tc = 25°C pulse test −40 VDD = −80 V VGS VDS −20 −4 −12 −8 −16 0 −20 20 40 60 80 100 0 40 80 120 160 −1 −3 −2 −4 0 −80 −40 Common source VDS = −10 V ID = −1 mA pulse test |
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