2SJ619 datasheet(4/6 Pages) TOSHIBA

No de pièce	2SJ619

Description	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

2SJ619

2006-11-16

4

Case temperature

Tc (°C)

RDS (ON) − Tc

Drain-source voltage VDS (V)

IDR − VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Case temperature Tc (°C)

Vth − Tc

Case temperature

Tc (°C)

PD − Tc

Total gate charge Qg (nC)

Dynamic input/output characteristics

−0.3

−30

−0.5

−3

−10

−5

−1.0

Common source

Tc

= 25°C

pulse test

−3

VGS = −10 V

−5

−1

−2

0, 1

0

0.2

0.4

0.6

0.8

1.0

0

0.5

0.1

0.3

0.2

0.4

Common source

pulse test

ID = −8 V

−4

−8

−2

−2, 4

VGS = −4 V

VGS = −10 V

−80

−40

0

40

80

160

120

100

300

1000

−1

−0.1

−100

−10

Ciss

Coss

Crss

Common source

VGS

= 0 V

f

= 1 MHz

Tc

= 25°C

10

30

500

3000

−0.3

−3

−30

5000

50

100

20

40

80

0

80

120

200

40

160

60

−100

−20

−60

−40

−80

0

Common source

ID = −16 A

Tc

= 25°C

pulse test

−40

VDD = −80 V

VGS

VDS

−20

−4

−12

−8

−16

0

−20

20

40

60

80

100

0

40

80

120

160

−1

−3

−2

−4

0

−80

−40

Common source

VDS = −10 V

ID = −1 mA

pulse test

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