2SJ567 datasheet(4/6 Pages) TOSHIBA

No de pièce	2SJ567

Description	Silicon P-Channel MOS Type Switching Applications

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

2SJ567

2006-11-16

4

Case temperature Tc (°C)

RDS (ON) – Tc

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Case temperature Tc (°C)

Vth – Tc

Case temperature Tc (°C)

PD – Tc

Total gate charge Qg (nC)

Dynamic input/output characteristics

0

−80

−40

0

40

80

120

160

1

2

3

4

5

6

Common source

VGS = −10 V

Pulse test

ID = −1.5 A

−1.2

−1.0

−0.1

0

−1

−10

0.2

0.4

0.6

0.8

1

Common source

Tc

= 25°C

Pulse test

VGS = 0 V

−1

−3

−5

1

−0.1

−1

−10

−100

10

100

1000

Ciss

Coss

Crss

Common source

VGS = 0 V

f

= 1 MHz

Tc

= 25°C

0

−80

−40

0

40

80

120

160

1

2

3

4

5

Common source

VDS = 10 V

ID = 1 mA

Pulse test

0

40

80

120

160

10

20

30

40

−4

0

4

8

12

16

20

−8

−12

−16

−40

−80

−120

−160

Common source

ID = −2.5 A

Tc

= 25°C

Pulse test

VDS = −40 V

−80

−180

VGS

VDS

Numéro de pièce similaire - 2SJ567

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	2SJ567	184Kb / 6P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
	2SJ567	234Kb / 6P	Switching Applications
	2SJ567	1Mb / 73P	Bipolar Small-Signal Transistors
	2SJ567(TE16L1,NQ)	182Kb / 6P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)
	2SJ567	184Kb / 6P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)

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Description similaire - 2SJ567

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