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2SD2695 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SD2695
Description  Silicon NPN Epitaxial Type (Darlington Power Transistor)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2695 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  2SD2695 Datasheet HTML 1Page - Toshiba Semiconductor 2SD2695 Datasheet HTML 2Page - Toshiba Semiconductor 2SD2695 Datasheet HTML 3Page - Toshiba Semiconductor 2SD2695 Datasheet HTML 4Page - Toshiba Semiconductor 2SD2695 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SD2695
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0
10
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
4
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
DC current gain
hFE
VCE = 2 V, IC = 1 A (pulsed)
2000
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 1 mA (pulsed)
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 1 mA (pulsed)
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A (pulsed)
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
Unclamped inductive load energy
ES/B
L = 10 mH, IC = 2.0 A, IB = ±50 mA
20
mJ
Turn-on time
ton
0.4
Storage time
tstg
4.0
Switching time
Fall time
tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
0.6
μs
Marking
D2695
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
20 μs
VCC = 30 V
Output
IB2
IB1
Input


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