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2SD2206 Fiches technique(PDF) 3 Page - Toshiba Semiconductor

No de pièce 2SD2206
Description  Silicon NPN Epitaxial Type (Darlington Power Transistor)
Download  4 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2206 Fiches technique(HTML) 3 Page - Toshiba Semiconductor

  2SD2206_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SD2206_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SD2206_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SD2206_06 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SD2206
2006-11-21
3
Collector-emitter voltage VCE (V)
IC – VCE
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
VBE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
10 k
10 m
10
1 k
3 k
30 m
100 m
300 m
1
10
Ta = 100°C
25
−55
Common emitter
VCE = 2 V
3
30
100
300
0.3
3
Ta = −55°C
100
25
Common emitter
IC/IB = 1000
1
1
0.5
3
5
0.5
0
0
2.4
3.2
Common emitter
VCE = 2 V
1
2
3
Ta = 100°C
25
−55
0.8
4.0
1.6
0.5
3
500 m
Common emitter
IC/IB = 1000
Ta = −55°C
25
100
1
5
5
3
300 m
100 m
1
10
0
0
1
3
1
2
3
5
Common emitter
Ta = 25°C
IB = 200 μA
300 μA
4
2
4
400 μA
500 μA
700 μA
1 mA
2 mA
3 mA
10
30 50
0.05
0.3
5
0.03
0.1
0.3
0.5
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
100 μs*
100
3
3
300
5
1
0.5


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