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2SD2131 Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce 2SD2131
Description  Silicon NPN Triple Diffused Type (Darlington)
Download  5 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2131 Fiches technique(HTML) 4 Page - Toshiba Semiconductor

  2SD2131 Datasheet HTML 1Page - Toshiba Semiconductor 2SD2131 Datasheet HTML 2Page - Toshiba Semiconductor 2SD2131 Datasheet HTML 3Page - Toshiba Semiconductor 2SD2131 Datasheet HTML 4Page - Toshiba Semiconductor 2SD2131 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SD2131
2006-11-21
4
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
PC – Ta
0
0
5
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
15
30
25
50
75
100
125
175
150
10
20
35
25
(1)
(2)
5
10
30
0.1
1
0.3
1
3
5
IC max (pulsed)*
VCEO max
10 ms*
3
100
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
DC operation
Tc = 25°C
IC max (continuous)
50
0.5
10
1 ms*
20
Pulse width tw (s)
Rth – tw
0.001
1000
10
100
0.01
0.1
30
0.3
3
1
100
10
1
0.1
(1) No heat sink Ta = 25°C
(2) Infinite heat sink Tc = 25°C
(2)
(1)


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