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2SC2290A Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SC2290A Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SC2290A 2007-11-01 2 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V (BR) CEO IC = 100mA, IB = 0 18 — — V Collector-Emitter Breakdown Voltage V (BR) CES IC = 100mA, VEB = 0 45 — — V Emitter-Base Breakdown Voltage V (BR) EBO IE = 1mA, IC = 0 4 — — V DC Current Gain hFE VCE = 5V, IC = 10A * 10 — 150 — Collector Output Capacitance Cob VCB = 12.5V, IE = 0 f = 1MHz — — 500 pF Power Gain Gp 11.8 13.8 — dB Input Power Pi — 2.5 4 WPEP Collector Efficiency ηC 35 — — % Intermodulation Distortion IMD VCC = 12.5V, f1 = 28.000MHz, f2 = 28.001MHz Iidle = 50mA Po = 60WPEP (Fig.) — — −30 dB Series Equivalent Input Impedance Zin — 1.02 −j0.17 — Ω Series Equivalent Output Impedance Zout VCC = 12.5V, f1 = 28.000MHz, f2 = 28.001MHz Po = 60WPEP — 0.86 −j0.21 — Ω * Pulse Test: Pulse Width ≤ 100μs, Duty Cycle ≤ 3% |
Numéro de pièce similaire - 2SC2290A |
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Description similaire - 2SC2290A |
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