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2SC5459 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SC5459
Description  Silicon NPN Triple Diffused Type
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5459 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SC5459
2007-04-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5459
Switching Regulator Applications
High-Voltage Switching Applications
DC-DC Converter Applications
• High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A)
• High collector breakdown voltage: VCEO = 400 V
• High DC current gain: hFE = 20 (min) (IC = 0.3 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Collector current
Pulse
ICP
5
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)


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