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2SC5196 Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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2SC5196 Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC5196 2006-11-10 3 Collector-emitter voltage VCE (V) IC – VCE IC – VBE Collector current IC (A) VCE (sat) – IC hFE – IC Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) Safe Operating Area 10 0 0 8 4 2 2 4 6 Common emitter Tc = 25°C 150 100 40 20 IB = 10 mA 50 8 10 250 200 300 6 30 10 0 0 8 4 2 0.4 0.8 1.2 Common emitter VCE = 5 V 25°C −25°C Tc = 100°C 1.6 2.0 6 Common emitter IC/IB = 10 10 0.01 0.01 0.1 0.1 1 10 Tc = 100°C Tc = −25°C Tc = 25°C 1 Common emitter VCE = 5 V 1000 1 0.01 10 0.1 1 10 Tc = 100°C Tc = −25°C Tc = 25°C 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 0.3 0.5 1 3 5 10 20 10 30 100 IC max (continuous) IC max (pulsed)* 1 ms* 10 ms* 100 ms* DC operation Tc = 25°C 3 300 VCEO max Collector current IC (A) |
Numéro de pièce similaire - 2SC5196_06 |
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Description similaire - 2SC5196_06 |
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