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2SC3420 Fiches technique(PDF) 3 Page - Toshiba Semiconductor

No de pièce 2SC3420
Description  Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3420 Fiches technique(HTML) 3 Page - Toshiba Semiconductor

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2SC3420
2006-11-09
3
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
hFE – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
VCE (sat) – IC
0
0
Common emitter
Tc = 25°C
10
6
3
4
5
6
30
100
50
70
150
20
IB = 10 mA
0
200
2
1
2
4
8
0.03
300
Common emitter
VCE = 2 V
10
30
50
100
1000
0.1
1
10
−25
25
Tc = 100°C
3
0.3
0.01
500
Common emitter
VCE = 2 V
0
1
4
5
6
0.6
0.8
1.2
Tc = 100°C
25
1.4
1.0
0.2
0.4
0
2
3
7
8
−25
Tc = 100°C
Common emitter
IC/IB = 40
3
0.05
0.1
0.3
0.5
1
−25
0.03
25
0.03
0.1
1
10
3
0.3
0.01
IC max (pulsed)**
1
3
10
30
50
0.1
0.3
1
3
5
* : Single nonrepetitive pulse
Tc = 25°C
**: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Tc = 25°C
Curves must be derated linearly
with increase in temperature
0.5
10
IC max (continuous)
DC operation
Tc = 25°C
10 ms*
100 ms*
VCEO max


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