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2SC3420 Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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2SC3420 Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC3420 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) VCE (sat) – IC 0 0 Common emitter Tc = 25°C 10 6 3 4 5 6 30 100 50 70 150 20 IB = 10 mA 0 200 2 1 2 4 8 0.03 300 Common emitter VCE = 2 V 10 30 50 100 1000 0.1 1 10 −25 25 Tc = 100°C 3 0.3 0.01 500 Common emitter VCE = 2 V 0 1 4 5 6 0.6 0.8 1.2 Tc = 100°C 25 1.4 1.0 0.2 0.4 0 2 3 7 8 −25 Tc = 100°C Common emitter IC/IB = 40 3 0.05 0.1 0.3 0.5 1 −25 0.03 25 0.03 0.1 1 10 3 0.3 0.01 IC max (pulsed)** 1 3 10 30 50 0.1 0.3 1 3 5 * : Single nonrepetitive pulse Tc = 25°C **: Pulse width = 10 ms (max) Duty cycle = 30% (max) Tc = 25°C Curves must be derated linearly with increase in temperature 0.5 10 IC max (continuous) DC operation Tc = 25°C 10 ms* 100 ms* VCEO max |
Numéro de pièce similaire - 2SC3420 |
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Description similaire - 2SC3420 |
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