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2SC3420 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SC3420
Description  Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3420 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SC3420
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3420
Strobe Flash Applications
Audio Power Amplifier Applications
• High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
• High collector power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
VCES
40
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulse
(Note 1)
ICP
8
A
Base current
IB
1
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)


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