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2SC3324 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SC3324 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC3324 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 200 ⎯ 700 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ⎯ ⎯ 0.3 V Transition frequency fT VCE = 6 V, IC = 1 mA ⎯ 100 ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF NF (1) VCB = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10 kΩ ⎯ 0.5 6 Noise figure NF (2) VCB = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ ⎯ 0.2 3 dB Note: hFE classification GR (G): 200~400, BL (L): 350~700 ( ) marking symbol |
Numéro de pièce similaire - 2SC3324_07 |
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Description similaire - 2SC3324_07 |
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