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G9906-01 Fiches technique(PDF) 1 Page - Hamamatsu Corporation

No de pièce G9906-01
Description  InGaAs PIN photodiode
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Fabricant  HAMAMATSU [Hamamatsu Corporation]
Site Internet  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G9906-01 Fiches technique(HTML) 1 Page - Hamamatsu Corporation

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G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active
area of
φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.
Features
l C-L band temperature dependence:
±0.2 dB (-10 ˚C to +85 ˚C)
l Small package
l Low dark current: 0.5 nA Max. (VR=5 V)
Applications
l C-L band monitors
PHOTODIODE
InGaAs PIN photodiode
Small package InGaAs PIN photodiode for C-L band
G9906-01
1
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Condition
Value
Unit
Reverse voltage
VR Max.
20
V
Forward current
IF
10
mA
Operating temperature
Topr
No condensation
-10 to +85
°C
Storage temperature
Tstg
No condensation
-55 to +125
°C
s Electrical and optical characteristics (Ta=25
°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Active area
-
-
φ0.3
-
mm
Spectral response range
λ
10 % or more of
peak sensitivity
-
0.9 to 1.7
-
µm
Peak sensitivity wavelength
λp
-
1.55
-
µm
λ=1.3 µm
0.8
0.9
-
Photo sensitivity
S
λ=λp
0.85
0.95
-
A/W
Photo response uniformity
-
λ=1.53 to 1.62 µm,
T= -10 to 85
°C
-0.2
-
+0.2
dB
Dark current
ID
VR=5 V
-
0.2
0.5
nA
Cut-off frequency
fc
VR=5 V, RL=50
-3dB
-
500
-
MHz
Terminal capacitance
Ct
VR=5 V, f=1 MHz
-
6
8
pF
Shunt resistance
Rsh
VR=10 mV
-
1000
-
M
Detectivity
D*
λ=λp
-
5
× 1012
-
cm · Hz
1/2/W
Noise equivalent power
NEP
λ=λp-
4
× 10-15
-W/Hz
1/2
Linearity
-
VR=5 V, RL=2
-55 to +10 dBm
-0.15
-
+0.15
dB


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