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G9230-01 Fiches technique(PDF) 1 Page - Hamamatsu Corporation

No de pièce G9230-01
Description  InGaAs PIN photodiode
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Fabricant  HAMAMATSU [Hamamatsu Corporation]
Site Internet  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G9230-01 Fiches technique(HTML) 1 Page - Hamamatsu Corporation

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Features
l Back-illuminated type
l Easy to handle since there are no wires on chip
(AnSn eutectic bonding)
Optical fibers can be brought closer to the chip
l Miniature package: 2 × 2 × 1 mm
l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
l Precise chip position tolerance: ±0.075 mm
Applications
l LD monitor
l Optical fiber communication
PHOTODIODE
InGaAs PIN photodiode
Back-illuminated type, uses package with no wire
G9230-01
1
s General / Absolute maximum ratings
Parameter
Symbol
value
Unit
Active area
-
φ0.3
mm
Reverse voltage
VR Max.
10
V
Operating temperature *
Topr.
-40 to +85
°C
Storage temperature *
Tstg.
-40 to +85
°C
* In N2 environment or in vacuum
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
0.95 to 1.7
-
µm
λ=1.3 µm
-
0.85
-
A/W
Photo sensitivity
S
λ=1.55 µm
0.85
0.95
-
A/W
Dark current
ID
VR=5 V
-
0.3
1.5
nA
Shunt resistance
Rsh
VR=10 mV
-
1000
-
M
Terminal capacitance
Ct
VR=5 V, f=1 MHz
-
5
-
pF
Cut-off frequency
fc
VR=5 V, RL=50
-
400
-
MHz
Noise equivalent power
NEP
λ=λp
-
4 × 10
-15
-W/Hz
1/2


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