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G8370-81 Fiches technique(PDF) 1 Page - Hamamatsu Corporation

No de pièce G8370-81
Description  InGaAs PIN photodiode
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Fabricant  HAMAMATSU [Hamamatsu Corporation]
Site Internet  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G8370-81 Fiches technique(HTML) 1 Page - Hamamatsu Corporation

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PHOTODIODE
InGaAs PIN photodiode
Low PDL (Polarization Dependence Loss)
G8370-81/-82/-83/-85
Features
l Low PDL (Polarization Dependence Loss)
l Low noise, low dark current
l Large active area
l Various active area sizes available
Applications
l Laser monitor
l Optical power meter
l Laser diode life test
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low
noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from
φ1 to φ5 mm.
1
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
Package
(mm)
(V)
(°C)
(°C)
G8370-81
➀/K
TO-18
φ15
G8370-82
φ2
G8370-83
➁/K
TO-5
φ3
2
G8370-85
➂/K
TO-8
φ51
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo
sensitivity
S
Spectral
response
range
Peak
sensitivity
wavelength
λp
1.3 µm
λ=λp
Dark
current
ID
VR=1 V
Cut- off
frequency
fc
V R=1 V
R L =50
-3 dB
Terminal
capacitance
Ct
V R=1 V
f=1 M H z
Shunt
resistance
Rsh
VR=10 m V
PDL
λ=λp
D∗
λ=λp
NEP
λ=λp
Type No.
(µm)
(µm)
Min.
(A/W)
Typ.
(A/W)
Min.
(A/W)
Typ.
(A/W)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
(M
Ω)
Typ.
(mdB)
Max.
(mdB) (cm· Hz1/2/W) (W/Hz1/2)
G8370-81
1
5
35
90
100
2 × 10
-14
G8370-82
525
4
550
25
4 × 10
-14
G8370-83
15
75
2
1000
10
6 × 10
-14
G8370-85
0.9 to 1.7
1.55
0.8 0.9 0.85 1.1
25 *
2 125 *2
0.6
3500
3
5
10
5 × 10
12
1 × 10
-13
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
*2: VR=0.1 V


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