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TPS616 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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TPS616 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TPS616(F) 2007-10-01 2 Opto-electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Dark current ID(ICEO) VCE = 24V ⎯ 0.01 0.1 μA Light current IL (Note 2) VCE = 3V, E = 0.1mW / cm 2 (Note 1) 10 ⎯ 75 μA Collector-emitter saturation voltage VCE(sat) IC = 5μA, E = 0.1mW / cm 2 (Note 1) ⎯ 0.2 0.4 V peak sensitivity wavelength λP ⎯ ⎯ 900 ⎯ nm Half value angle θ 2 1 ⎯ ⎯ ±30 ⎯ ° Rise time tr ⎯ 9 ⎯ Switching time Fall time tf VCC = 10V,IC = 1mA RL = 1kΩ ⎯ 10 ⎯ μs Note 1: Color temperature = 2870K,standard tungsten lamp. Note 2: IL classification A: 10~25μA, B: 17~42.5μA, C: 30~75μA, AB: 10~42.5μA, BC: 17~75μA Precaution Please be careful of the followings. 1. Soldering temperature: 260°C max. Soldering time: 3s max. (Soldering portion of lead: Above 1.5mm from the body of the device) 2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Soldering shall be performed after lead forming. |
Numéro de pièce similaire - TPS616_07 |
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Description similaire - TPS616_07 |
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