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TPS616 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TPS616
Description  Silicon NPN Epitaxial Planar
Download  6 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPS616 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  TPS616_07 Datasheet HTML 1Page - Toshiba Semiconductor TPS616_07 Datasheet HTML 2Page - Toshiba Semiconductor TPS616_07 Datasheet HTML 3Page - Toshiba Semiconductor TPS616_07 Datasheet HTML 4Page - Toshiba Semiconductor TPS616_07 Datasheet HTML 5Page - Toshiba Semiconductor TPS616_07 Datasheet HTML 6Page - Toshiba Semiconductor  
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TPS616(F)
2007-10-01
2
Opto-electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Dark current
ID(ICEO)
VCE = 24V
0.01
0.1
μA
Light current
IL
(Note 2)
VCE = 3V, E = 0.1mW / cm
2
(Note 1)
10
75
μA
Collector-emitter saturation
voltage
VCE(sat)
IC = 5μA, E = 0.1mW / cm
2
(Note 1)
0.2
0.4
V
peak sensitivity wavelength
λP
900
nm
Half value angle
θ
2
1
±30
°
Rise time
tr
9
Switching time
Fall time
tf
VCC = 10V,IC = 1mA
RL = 1kΩ
10
μs
Note 1: Color temperature = 2870K,standard tungsten lamp.
Note 2: IL classification A: 10~25μA, B: 17~42.5μA, C: 30~75μA, AB: 10~42.5μA, BC: 17~75μA
Precaution
Please be careful of the followings.
1. Soldering temperature: 260°C max. Soldering time: 3s max.
(Soldering portion of lead: Above 1.5mm from the body of the device)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Soldering shall be performed after lead forming.


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