U20GL2C48A

2006-11-08

1

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

U20GL2C48A

SWITCHING MODE POWER SUPPLY APPLICATION

CONVERTER and CHOPPER APPLICATION

Repetitive Peak Reverse Voltage

Average Output Rectified Current

Low Switching Losses and Output Noise

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak Reverse Voltage

400

V

Average Output Rectified Current

20

A

100 (50Hz)

Peak One Cycle Surge Forward

Current (Sin Wave)

110 (60Hz)

A

Junction Temperature

−40~150

°C

Storage Temperature Range

−40~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Peak Forward Voltage

―

―

1.8

V

Repetitive Peak Reverse Current

―

―

50

μA

Reverse Recovery Time

―

―

35

ns

Forward Recovery Time

―

―

100

ns

Thermal Resistance

Total DC, Junction to Case

―

―

1.6

°C / W

Note:

POLARITY

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

12-10D2A

Weight:

g (typ.)