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TPD1032F Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPD1032F Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPD1032F 2006-10-31 1 Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2- π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). • Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C) • Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C) • Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40~110°C) • 8-pin SOP package for surface with embossed-tape packing. Pin Assignment (top view) Note1: Due to its MOS structure, this product is sensitive to static electricity. Marking Weight: 0.08 g (typ.) SOURCE1 IN1 SOURCE2 1 2 3 8 6 7 DRAIN1 DRAIN1 DRAIN2 IN2 4 5 DRAIN2 T P D 103 2 F Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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