TPCP8302 datasheet(4/7 Pages) TOSHIBA

No de pièce	TPCP8302

Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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TPCP8302

2006-11-17

4

−0.8

−1.2

−2.0

−2.4

−1.6 V

−10 V

−6 V

−3 V

−2.5 V

−2 V

−1.4 V

−1.8 V

VGS = −1.2V

−4 V

−2.2 V

−3 V

−1.8 V

VGS = −1.2 V

−4 V

−10 V

−6 V

−2 V

−2.2 V

−2.5 V

−1.6 V

−1.4 V

VGS = −1.8 V

−2.5 V

−4 V

Ta

= −55°C

25°C

100°C

−2.5 A

ID = −5 A

−1.3 A

Ta

= −55°C

100°C

25°C

0

−0.4

−0.8

−1.2

−1.6

−2.0

ID – VDS

ID – VGS

VDS – VGS

|Yfs| – ID

RDS (ON) – ID

0

−0.2

−0.4

−0.6

−0.8

−1.0

0

−2

−4

−6

−8

−10

0

−4

−8

−12

−16

−20

0

−4

−6

−10

−12

0

−0.4

0

−0.4

−0.6

−0.8

−1.0

−1.2

0

−2

−4

−6

−8

−10

1

10

100

−0.1

−1

−10

Common source

Ta

= 25°C

Pulse test

10

1000

100

−0.1

−1

−10

−8

−2

Common source

Ta

= 25°C

Pulse test

Common source

VDS = −10 V

Pulse test

Common source

Ta

= 25°C

Pulse test

Common source

VDS = −10 V

Pulse test

−1.6

−0.2

Common source

Ta

= 25°C

Pulse test

Drain

−source voltage VDS (V)

Drain-source voltage VDS (V)

Gate

−source voltage VGS (V)

Gate

−source voltage VGS (V)

Drain current ID (A)

Numéro de pièce similaire - TPCP8302

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TPCP8302 Fiches technique(PDF) 4 Page - Toshiba Semiconductor

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