TPCP8002

2007-01-16

1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

TPCP8002

Notebook PC Applications

Portable Equipment Applications

• Lead (Pb)-Free

• Small footprint due to small and thin package

• Low drain-source ON-resistance

• High forward transfer admittance

• Low leakage current

• Enhancement mode

Characteristic

Symbol

Rating

Unit

Drain-source voltage

20

V

20

V

Gate-source voltage

±12

V

DC

(Note 1)

9.1

Drain current

Pulse

(Note 1)

36.4

A

Drain power dissipation (t

= 5 s)

(Note 2a)

1.68

Drain power dissipation (t

= 5 s)

(Note 2b)

0.84

W

Single pulse avalanche energy

(Note 3)

21.5

mJ

Avalanche current

9.1

A

Repetitive avalanche energy

(Note 4)

0.168

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1K

Circuit Configuration

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1．Source

2．Source

3．Source

4．Gate

5．Drain

6．Drain

7．Drain

8．Drain

8

7

6

5

1

2

3

4

Lot No.

1

2

3

4

8

7

6

5

8002

*