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IRF7474PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7474PBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7474PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 6.5 ––– ––– S VDS = 50V, ID = 2.7A Qg Total Gate Charge ––– 27 41 ID = 2.7A Qgs Gate-to-Source Charge ––– 10 ––– nC VDS = 50V Qgd Gate-to-Drain ("Miller") Charge ––– 9.0 ––– VGS = 10V, td(on) Turn-On Delay Time ––– 14 ––– VDD = 50V tr Rise Time ––– 7.9 ––– ID = 2.7A td(off) Turn-Off Delay Time ––– 16 ––– RG = 6.0Ω tf Fall Time ––– 5.9 ––– VGS = 10V Ciss Input Capacitance ––– 1400 ––– VGS = 0V Coss Output Capacitance ––– 100 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 56 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 380 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 68 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 110 ––– VGS = 0V, VDS = 0V to 80V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 51 mJ IAR Avalanche Current ––– 2.7 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.7A, VGS = 0V trr Reverse Recovery Time ––– 45 ––– ns TJ = 25°C, IF = 2.7A Qrr Reverse RecoveryCharge ––– 100 ––– nC di/dt = 100A/µs Diode Characteristics 2.3 36 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 50 63 m Ω VGS = 10V, ID = 2.7A VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 1.0 µA VDS = 95V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current |
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