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74LVC3GU04DP Fiches technique(PDF) 6 Page - NXP Semiconductors |
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74LVC3GU04DP Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 74LVC3GU04_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 5 October 2007 6 of 16 NXP Semiconductors 74LVC3GU04 Triple inverter [1] All typical values are measured at Tamb =25 °C. 11. Dynamic characteristics [1] Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(CL × VCC2 × fo) = sum of outputs. VOL LOW-level output voltage VI =VIH or VIL IO = 100 µA; VCC = 1.65 V to 5.5 V - - 0.1 V IO = 4 mA; VCC = 1.65 V - - 0.70 V IO = 8 mA; VCC = 2.3 V - - 0.45 V IO = 12 mA; VCC = 2.7 V - - 0.60 V IO = 24 mA; VCC = 3.0 V - - 0.80 V IO = 32 mA; VCC = 4.5 V - - 0.80 V II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V -- ±20 µA ICC supply current VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V; IO =0A -- 40 µA Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ[1] Max Unit Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max tpd propagation delay nA to nY; see Figure 7 [2] VCC = 1.65 V to 1.95 V 0.5 2.3 5.0 0.5 6.3 ns VCC = 2.3 V to 2.7 V 0.3 1.8 4.0 0.3 4.0 ns VCC = 2.7 V 0.3 2.6 4.5 0.3 5.6 ns VCC = 3.0 V to 3.6 V 0.3 2.3 3.7 0.3 4.5 ns VCC = 4.5 V to 5.5 V 0.3 1.7 3.0 0.3 3.8 ns CPD power dissipation capacitance VI = GND to VCC; VCC = 3.3 V [3] -7- - - pF |
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