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BF1214 Fiches technique(PDF) 9 Page - NXP Semiconductors |
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BF1214 Fiches technique(HTML) 9 Page - NXP Semiconductors |
9 / 18 page BF1214_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 October 2007 9 of 18 NXP Semiconductors BF1214 Dual N-channel dual gate MOSFET 8.2 Graphs for amplifier A VDS(A) =5V; VGG =5V; ID(nom)(A) =18mA; RG1(A) =68kΩ; fw = 50 MHz; Tamb =25 °C; see Figure 24. VDS(A) =5V; VGG =5V; VG2-S(nom) =4V; RG1(A) =68kΩ; fw = 50 MHz; funw = 60 MHz; ID(nom)(A) = 18 mA; Tamb =25 °C; see Figure 24. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values Fig 11. Amplifier A: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values VDS(A) =5V; VGG =5V; VG2-S(nom) =4V; RG1(A) =68kΩ; fw = 50 MHz; ID(nom)(A) = 18 mA; Tamb =25 °C; see Figure 24. Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values 001aah001 VAGC (V) 04 3 12 30 20 40 10 0 gain reduction (dB) 50 001aah002 gain reduction (dB) 050 40 20 30 10 90 100 110 Vunw (dB µV) 80 001aah003 gain reduction (dB) 050 40 20 30 10 10 20 30 ID (mA) 0 |
Numéro de pièce similaire - BF1214 |
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Description similaire - BF1214 |
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