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IRL1404ZPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRL1404ZPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 13 page IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF HEXFET® Power MOSFET VDSS = 40V RDS(on) = 3.1mΩ ID = 75A 05/17/06 www.irf.com 1 AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free D2Pak IRL1404ZSPbF TO-220AB IRL1404ZPbF TO-262 IRL1404ZLPbF PD - 97211 G D S GD S G D S GD S Gate Drain Source Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 k °C/W RθCS Case-to-Sink, Flat, Greased Surface i 0.50 ––– RθJA Junction-to-Ambient i ––– 62 RθJA Junction-to-Ambient (PCB Mount) jà ––– 40 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) 200 1.3 ± 16 Max. 180 130 790 75 490 190 See Fig.12a, 12b, 15, 16 |
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