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SB106P200-W-AG Fiches technique(PDF) 1 Page - TRANSYS Electronics Limited

No de pièce SB106P200-W-AG
Description  Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
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Fabricant  TEL [TRANSYS Electronics Limited]
Site Internet  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

SB106P200-W-AG Fiches technique(HTML) 1 Page - TRANSYS Electronics Limited

  SB106P200-W-AG Datasheet HTML 1Page - TRANSYS Electronics Limited  
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Data Sheet
Third Angle Protection
µm
420 +/- 20
Symbol
Cathode
Anode
Solderable
Surface Ti/Ni/Ag
Cathode
Dimensions in mils (mm)
(2) The characteristics above assume the die are assembled in
indusry standard packages using appropriate attach methods.
Mechanical Dimensions
Wafer
Die
SCD0908-1
Page 1 of 1
Transys Electronics LTD
Birmingham UK.
Email: sales@transyselectronics.com
Website: www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed to
be accurate and may be changed without notice at anytime. Liability will not be accepted by
Transys Electronics LTD for any consequences whatsoever in its use. This publication does
not convey nor imply any license under patent or other intellectual/industrial property rights.
The products within this specification are not designed for use in any life support
apparatus whatsoever where malfunction can be reasonably expected to cause personal
injury or death. Customers using these products in the aforementioned applications do so at
their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal
fees either direct, incidental or consequential from this improper use or sale.
SB106P200-W-Ag/Al
Schottky Barrier Diode Wafer
106 Mils, 200 Volt, 10 Amp
200
VRRM
Maximum Repetitive Reverse Voltage (2)
Electrical Characteristics @ 25
Reverse Leakage Current (2)
IR
C
Volt
10
Storage Temperature Range (2)
TJ
-65 to +150
C
SB106P200-W-Ag/Al (See ordering code below)
IF(AV)
10
Typical Average Forward Rectified Current (2)
µA
Junction Operating Temperature Range (2)
TSG
-65 to +150
Maximum Forward Voltage (1)(2)
VF
Volt
0.85
Amp
Symbol Unit
Reverse Leakage Current @ 125 C (2)
IR
mA
C
(1) Pulse Width tp = < 300µS, Duty Cycle <2%
106.0
(2.70)
97.6
(2.48)
1. Solderable Surface Ti/Ni/Ag
- Suffix "Ag"
2. Wire Bond Surface Aluminium - Suffix "Al"
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - Ti/Ni/Ag (Suffix "Ag")
or Aluminium (Suffix "Al")
Bottom (cathode) Ti/Ni/Ag
97.6
(2.48)
106.0
(2.70)
Features
Oxide Passivated Junction
Low Forward Voltage
150 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
Schottky Barrier
40 Mils
Pt Barrier 150 Volt
Wafer Ti/Ni/Ag
Ordering Code
SB040P150-W-Ag
5


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