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BD675 Fiches technique(PDF) 1 Page - TRANSYS Electronics Limited

No de pièce BD675
Description  NPN DARLINGTON POWER SILICON TRANSISTOR
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Fabricant  TEL [TRANSYS Electronics Limited]
Site Internet  http://www.transyselectronics.com
Logo TEL - TRANSYS Electronics Limited

BD675 Fiches technique(HTML) 1 Page - TRANSYS Electronics Limited

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NPN DARLINGTON POWER SILICON TRANSISTOR
BD 675
(BPL)
TO-126
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
VCBO
45
V
Collector -Emitter Voltage
VCEO
45
V
Emitter Base Voltage
VEBO
5.0
V
Collector Current
IC
4.0
A
Base Current
IB
0.1
A
Power Dissipation @ Tc=25 deg C
PD
40
W
Derate Above 25 deg C
0.32
W/deg C
Junction Temperature
Tj
150
deg C
Storage Temperature Range
Tstg
-55 to +150
deg C
Thermal Resistance
Junction to Case
Rth(j-c)
3.13
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter (sus) Voltage
VCEO(sus)*
IC=50mA, IB=0
45
-
-
V
Collector Cut off Current
ICEO
VCE=23V, IB=0
-
-
500
uA
ICBO
VCB=45V, IE=0
-
-
0.2
mA
Tc=100 deg C
VCB=45V, IE=0
-
-
2.0
mA
Emitter Cut off Current
IEBO
VBE=5V,IC=0
-
-
2.0
mA
DC Current Gain
hFE*
IC=500mA, VCE=5V
800
-
3200
Collector Emitter Saturation Voltage
VCE(Sat)*
IC=1.5A, IB=30mA
-
-
2.5
V
Base Emitter on Voltage
VBE(on)*
IC=1.5A, VCE=3V
-
-
2.5
V
Gain Bandwidth Product
ft
IC=50mA, VCE=10V,
260
-
MHz
Pulse Test:-Pulse Width=300us, Duty Cycle=2%
Transys
Electronics
LI M ITE D


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