BAV99 datasheet(1/2 Pages) TEL

No de pièce	BAV99

Description	SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES

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Fabricant	TEL [TRANSYS Electronics Limited]

Site Internet	http://www.transyselectronics.com

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SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES

Silicon planar high-speed switching series diode pair

Marking

BAV99 = A7

ABSOLUTE MAXIMUM RATINGS

Continuous reverse voltage

VR

max.

75 V

Repetitive peak reverse voltage

VRRM max.

85 V

Repetitive peak forward current

IFRM

max.

450 mA

Junction temperature

Tj

max.

150 °C

Forward voltage at IF = 50 mA

VF

<

1,0 V

Reverse recovery time when switched from

IF = 10 mA to IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA

trr

<4 ns

Recovery charge when switched from

IF = 10 mA to VR = 5 V; RL = 100 Ω

Qs

<45 pC

RATINGS (per diode) (at TA = 25°C unless otherwise specified)

Limiting values

Continuous reverse voltage

VR

max.

75 V

Repetitive peak reverse voltage

VRRM max.

85 V

BAV99

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = ANODE

2 = CATHODE

3 = CATHODE/ANODE

1

2

3

SOT-23 Formed SMD Package

Transys

Electronics

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