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2SC5949 Fiches technique(PDF) 3 Page - Toshiba Semiconductor

No de pièce 2SC5949
Description  Transistor Silicon NPN Triple Diffused Type
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5949 Fiches technique(HTML) 3 Page - Toshiba Semiconductor

  2SC5949 Datasheet HTML 1Page - Toshiba Semiconductor 2SC5949 Datasheet HTML 2Page - Toshiba Semiconductor 2SC5949 Datasheet HTML 3Page - Toshiba Semiconductor 2SC5949 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC5949
2006-11-16
3
12
0
8
12
16
20
4
6
8
10
0
2
4
0.1
5
10
1000
0.03
30
10
10
1
10
1
0.1
0.01
100
IC – VCE
IC– VBE
hFE – IC
VCE (sat) – IC
fT– IC
0.5
0
8
12
16
0
1.0
2.5
100
1000
0.1
1
10
10
100
0.1
1
Safe operating area
100
4
1.5
2.0
300
500
30
50
1
3
0.3
0.1
0.03
30
10
1
3
0.3
0.01
2
0.3
0.5
1
0.1
0.03
0.05
IB = 20 mA
Common emitter
Tc
= 25°C
500
400
200
300
100
50
Tc
= 100°C
25
−25
Common emitter
VCE = 5 V
Tc
= 100°C
25
−25
Common emitter
VCE = 5 V
Tc
= 100°C
25
−25
Common emitter
IC / IB = 10 V
Common emitter
Tc
= 25°C
VCE = 5 V
VCEO max
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
linearly with increase in
temperature.
1 ms *
IC max (pulsed) *
10 ms *
IC max (continuous)
DC operation
Tc
= 25°C
100 ms *
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)


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