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2SC5949 Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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2SC5949 Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC5949 2006-11-16 3 12 0 8 12 16 20 4 6 8 10 0 2 4 0.1 5 10 1000 0.03 30 10 10 1 10 1 0.1 0.01 100 IC – VCE IC– VBE hFE – IC VCE (sat) – IC fT– IC 0.5 0 8 12 16 0 1.0 2.5 100 1000 0.1 1 10 10 100 0.1 1 Safe operating area 100 4 1.5 2.0 300 500 30 50 1 3 0.3 0.1 0.03 30 10 1 3 0.3 0.01 2 0.3 0.5 1 0.1 0.03 0.05 IB = 20 mA Common emitter Tc = 25°C 500 400 200 300 100 50 Tc = 100°C 25 −25 Common emitter VCE = 5 V Tc = 100°C 25 −25 Common emitter VCE = 5 V Tc = 100°C 25 −25 Common emitter IC / IB = 10 V Common emitter Tc = 25°C VCE = 5 V VCEO max *:Single non-repetitive pulse Tc = 25°C Curves must be de-rated linearly with increase in temperature. 1 ms * IC max (pulsed) * 10 ms * IC max (continuous) DC operation Tc = 25°C 100 ms * Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) Collector current IC (A) Collector-emitter voltage VCE (V) |
Numéro de pièce similaire - 2SC5949 |
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