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2SC5949 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SC5949 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SC5949 2006-11-16 2 Electrical Characteristics (Tc = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ― ― 5.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 µA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 200 ― ― V hFE (1) (Note 1) VCE = 5 V, IC = 1 A 55 ― 160 DC current gain hFE (2) VCE = 5 V, IC = 8 A 35 60 ― Collector-emitter saturation voltage VCE (sat) IC = 10 A, IB = 1 A ― 0.4 3.0 V Base-emitter voltage VBE VCE = 5 V, IC = 8 A ― 1.0 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 270 ― pF Note 1: hFE(1) classification R: 55 to 110, O: 80 to 160 Marking 2SC5949 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) Characteristics indicator |
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