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2SC5949 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SC5949
Description  Transistor Silicon NPN Triple Diffused Type
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5949 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SC5949
2006-11-16
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5949
Power Amplifier Applications
• Complementary to 2SA2121
• Recommended for audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
200
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
PC
220
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)


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