0 - 8

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC-ABH241

v00.0907

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 50 - 66 GHz

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage

+5.5 Vdc

Gain Bias Voltage

-1 to +0.3 Vdc

RF Input Power

2 dBm

Storage Temperature

-65 °C to + 150°C

Chennel Temperature

+180 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”