IRF7404QPBF datasheet(1/9 Pages) IRF

No de pièce	IRF7404QPBF

Description	HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040廓 )

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Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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HEXFET® Power MOSFET

IRF7404QPbF

Top View

8

1

2

3

4

5

6

7

D

G

S

A

D

S

VDSS = -20V

RDS(on) = 0.040Ω

Parameter

Max.

Units

ID @ TA = 25°C

10 Sec. Pulsed Drain Current, VGS @ -4.5V

-7.7

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-6.7

ID @ TA = 70°C

Continuous Drain Current, VGS @ -4.5V

-5.4

IDM

Pulsed Drain Current

-27

PD @TA = 25°C

Power Dissipation

2.5

W

Linear Derating Factor

0.02

W/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

08/29/07

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

50

°C/W

www.irf.com

1

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

P Channel MOSFET

l

Surface Mount

l

Available in Tape & Reel

l

150°C Operating Temperature

l

Automotive [Q101] Qualified

l

Lead-Free

Description

Specifically designed for Automotive applications, these

HEXFET® Power MOSFET's in package utilize the lastest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a

150°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating. These

benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and

a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal

characteristics making it ideal in a variety of power

applications. This surface mount SO-8 can dramatically

reduce board space and is also available

in Tape & Reel.

SO-8

PD - 96127

Numéro de pièce similaire - IRF7404QPBF

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	IRF7404	163Kb / 8P	HEXFET Power MOSFET
Analog Devices	IRF7404	416Kb / 24P	Thermoelectric Cooler Controller REV. C
Analog Devices	IRF7404	279Kb / 22P	Thermoelectric Cooler Controller REV. D
Guangdong Youtai Semico...	IRF7404	394Kb / 8P	P-Channel MOSFET
International Rectifier	IRF7404PBF	231Kb / 9P	HEXFET Power MOSFET

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Description similaire - IRF7404QPBF

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	IRF7604PBF	508Kb / 8P	HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09廓 )
	IRLR3714PBF	227Kb / 11P	HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m廓 , ID = 36A )
	IRF7457PBF	177Kb / 8P	HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 7.0m廓 , ID = 15A )
	IRF7303PBF	230Kb / 9P	HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )
	IRFP3710PBF	233Kb / 9P	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )
	IRFZ48RSPBF	255Kb / 10P	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )
	IRFD9110PBF	1Mb / 8P	HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2廓 , ID = -0.70A )
	IRL640PBF	930Kb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )
	IRF630PBF	2Mb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRFR9210PBF	1Mb / 10P	HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A )

More results

IRF7404QPBF Fiches technique(PDF) 1 Page - International Rectifier

IRF7404QPBF Fiches technique(HTML) 1 Page - International Rectifier

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