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IRF7404QPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7404QPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET IRF7404QPbF Top View 8 1 2 3 4 5 6 7 D D D G S A D S S VDSS = -20V RDS(on) = 0.040Ω Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -7.7 ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -6.7 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -5.4 IDM Pulsed Drain Current -27 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings A 08/29/07 Thermal Resistance Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W www.irf.com 1 l Advanced Process Technology l Ultra Low On-Resistance l P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 PD - 96127 |
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