STF25NM60N datasheet(5/18 Pages) STMICROELECTRONICS

No de pièce	STF25NM60N

Description	N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET

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STB25NM60N/-1 - STF25NM60N - STP25NM60N - STW25NM60N

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test condictions

Min.

Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD =300V, ID = 10A

RG =4.7Ω VGS = 10V

(see Figure 17)

24.5

18

94

24

ns

Table 7.

Source drain diode

Symbol

Parameter

Test condictions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

20

80

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

ISD = 20A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A, di/dt = 100A/µs

VDD = 100V, Tj = 25°C

(see Figure 22)

427

7.2

33.6

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A, di/dt = 100A/µs

VDD = 100V, Tj = 150°C

(see Figure 22)

526

9.1

34.5

ns

µC

A

Numéro de pièce similaire - STF25NM60N

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STF25NM60N	273Kb / 12P	N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET
	STF25NM60N	578Kb / 18P	N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STF25NM60ND	530Kb / 18P	N-channel 600 V - 0.13 廓 - 21 A FDmesh??II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247
	STF25NM60ND	600Kb / 18P	N-channel 600 V, 0.13 廓, 21 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
Inchange Semiconductor ...	STF25NM60ND	310Kb / 2P	isc N-Channel MOSFET Transistor

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